IRF3205 N-Channel MOSFET

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Drain-to-source voltage: 55V
Gate -to-source voltage: ±20V
Continuous drain current: 80A
Pulsed drain current: 390A
Avalanche current: 62A
Static drain to source on-resistance: 8mΩ
Gate threshold voltage: 2V to 4V
Rise time: 101ns
Fall time: 65ns

40.00 "inc. GST"

In stock

IRF3205 is a advanced HexFET power MOSFET from international rectifier (infineon). It uses the advance processing technique to get extremely low on-resistance per silicon area, fast switching and ruggedized device design. The MOSFET has TO-220 package which is most commonly preferred commercially.

SKU: BM0028 Category: Tags: , ,

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